DMP2900UW-13

$0.04

Description：MOSFET BVDSS: 8V-24V SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e4abcb44504b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V-24V SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
Vgs (Max)：±6V
Input Capacitance (Ciss) (Max) @ Vds：49 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：300mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

Download product information

DMP2900UW-13

Overview

The DMP2900UW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -20V and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current (ID) of -0.6A at TA = +25°C with a steady-state total power dissipation (PD) of 0.3W. Static drain-source on-resistance (RDS(ON)) values are specified as 750mΩ at VGS = -4.5V, 1050mΩ at VGS = -2.5V, and 1500mΩ at VGS = -1.8V. The gate threshold voltage (VGS(TH)) ranges from -0.5V to -1.0V. The component utilizes an SOT323 surface-mount package.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features low input capacitance and fast switching speed characteristics.
Includes ESD protected gate structure and low input/output leakage specifications.
Totally lead-free and fully RoHS compliant, halogen and antimony free.

Applications

DC-DC Converters
Load Switch
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the requested part number matches the exact electrical ratings and thermal characteristics required for the target application environment. Ensure compliance with applicable automotive or industrial standards if necessary, as standard versions may differ from qualified variants.

Selection Notes

Select this component for circuits requiring a compact P-channel switch with a -20V rating. Evaluate the RDS(ON) requirements against available gate drive voltages (-1.8V, -2.5V, or -4.5V) to ensure adequate current handling. Consider the thermal resistance of 393 °C/W for heat dissipation calculations in steady-state conditions.

Part Context

This component belongs to the DMP2900 series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated under the DiodesZetex brand. It is designed for surface-mount assembly using the SOT323 case style. The product line emphasizes low on-resistance and fast switching capabilities suitable for portable and battery-powered electronics.

Replacement Considerations

DMP2900UW-7 is an equivalent part number offering identical electrical specifications but packaged in a 3,000-unit tape and reel quantity instead of 10,000 units.