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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V-24V SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±6V
- Input Capacitance (Ciss) (Max) @ Vds：49 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：300mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMP2900UW-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current of -0.6A at +25°C, with an on-state resistance of 750mΩ at VGS = -4.5V. Total power dissipation is rated at 0.3W in steady state. It utilizes an SOT323 case package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Features low gate threshold voltage and low input capacitance for fast switching speed.
- Includes ESD protected gate and exhibits low input/output leakage characteristics.
- Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Applications
- DC-DC Converters
- Load Switch
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix when purchasing. The -7 suffix indicates a tape and reel packaging quantity of 3,000 units. Confirm that the required component matches the standard DMP2900UW specification before finalizing orders. Ensure compliance with applicable environmental directives during procurement.
Selection Notes
Select this component for applications requiring a single P-channel MOSFET in a compact SOT323 package. Evaluate the 750mΩ on-resistance against circuit requirements at the intended gate drive voltage. Consider the thermal resistance of 393°C/W for heat dissipation calculations under steady-state conditions.
Part Context
This part belongs to the DMP2900 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining switching performance. The DMP2900UW variant specifically utilizes the SOT323 surface-mount case configuration.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameters such as breakdown voltage and on-resistance before substituting components in existing designs.
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDSS) is rated at -20V.
What is the typical total gate charge?
The typical total gate charge (Qg) is 0.7nC, measured at VGS = -4.5V and VDS = -10V.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control or AEC-Q100 qualification, contact Diodes Incorporated directly.
