DMP3004SSS-13

$1.67

Description：MOSFET P-CH 30V 16.2A 8SO T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:85b133887f45 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 16.2A 8SO T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：16.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：156 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7693 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP3004SSS-13

Overview

The DMP3004SSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOIC-8 surface-mount package and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of -30V, a maximum continuous drain current (ID) of -16.2A at 25°C, and a low static drain-source on-resistance (RDS(ON)) of 4.0mΩ at VGS = -10V. The device exhibits fast switching characteristics with turn-on rise time of 6.8ns and total gate charge of 156nC at VGS = -10V.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Qualified to AEC-Q101 standards for automotive reliability

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS and halogen-free status against project specifications. Ensure the SOIC-8 footprint matches the recommended pad layout provided in the datasheet to maintain thermal performance and solderability.

Selection Notes

Select this component when a single P-channel MOSFET with low RDS(ON) and high current capability is required in an SOIC-8 package. Consider the -30V rating and -16.2A continuous current limits for load requirements. Evaluate the thermal resistance values based on the intended PCB copper area and mounting conditions to ensure safe operating area compliance.

Part Context

This part belongs to the DMP3004 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is fully lead-free, RoHS compliant, and halogen/antimony free, targeting green electronics applications.

Replacement Considerations

Cross-reference with other Diodes Incorporated P-channel MOSFETs in SOIC-8 packages having similar BVDSS and RDS(ON) ratings. Verify pinout compatibility and thermal characteristics before substitution.