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The DMP3007LK3-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO252 (DPAK) case with a maximum drain-source voltage of -30V and a gate-source voltage rating of ±25V. The device exhibits a maximum on-resistance of 7.0mΩ at VGS = -10V and 10.0mΩ at VGS = -4.5V. Continuous drain current ratings are -18.5A at +25°C and -15A at +70°C. Total power dissipation reaches 3.0W when mounted on an FR-4 substrate with thermal bias, while the junction-to-case thermal resistance is 1.5°C/W.
Verify that the component matches the specified TO252 (DPAK) package and the manufacturer marking code P3007L. Confirm compliance with RoHS 2 and RoHS 3 directives as well as halogen and antimony-free status. Ensure the ordering suffix corresponds to the 2,500 units per tape and reel packaging format.
Select this component for applications requiring efficient power switching within a 30V system. Evaluate the thermal performance based on the specific PCB copper area and ambient temperature conditions. Consider the gate threshold voltage range and total gate charge requirements relative to the driving circuit capabilities.
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The product is housed in a molded plastic green molding compound case with a UL flammability classification rating of 94V-0.
Cross-reference with other DMP series parts such as DMP3007SCG or DMP3007SFG if different package types like V-DFN3333 are required. Verify pinout compatibility and electrical parameters before substituting components from other manufacturers.
The maximum pulsed drain current is -250A, measured with a 380µs pulse duration and a duty cycle of 1%.
The datasheet does not list AEC-Q101 qualification for this specific part number.