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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：18.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2826 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMP3007LK3Q-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -30V drain-source voltage and low on-resistance of 7.0mΩ at VGS=-10V and 10.0mΩ at VGS=-4.5V. The device supports continuous drain currents of -18.5A at +25°C and -15A at +70°C. It operates within a junction temperature range of -55°C to +150°C, complies with AEC-Q101 standards, and utilizes a TO252 (DPAK) package.
Feature Summary
- Low on-resistance for efficient power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Qualified for automotive environments under AEC-Q101
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the component meets IATF 16949 manufacturing requirements if your application demands strict automotive change control protocols. Ensure compatibility with RoHS directives and verify lead finish specifications before integration.
Selection Notes
Select this component when designing circuits requiring robust P-channel switching capabilities within a -30V system architecture. The TO252 package provides adequate thermal dissipation for moderate current loads up to 18.5A. Consider the gate threshold voltage characteristics to ensure reliable turn-on behavior across the specified operating temperature range and load conditions.
Part Context
This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability standards. The device integrates advanced silicon technology to deliver high performance in compact surface-mount packages suitable for automated assembly processes.
Replacement Considerations
Consult official substitution lists from Diodes Incorporated for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions carefully. Verify that any substitute component maintains AEC-Q101 qualification if required by your design specifications.
