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Product Detailed Parameters
- Description：MOSFET P-CH 30V 50A 8DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.8mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64.2 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2826 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：V-DFN3333-8 (Type B)
- Package / Case：8-PowerVDFN
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Overview
The DMP3007SCGQ-13 is a P-channel enhancement mode MOSFET with a -30V drain-source voltage rating. It features a maximum on-resistance of 6.8mΩ at VGS=-10V and 13mΩ at VGS=-4.5V, supporting continuous drain currents up to -50A at TC=+25°C. The device utilizes a V-DFN3333-8 (Type B) surface-mount package. Key electrical parameters include a gate threshold voltage range of -1.0V to -3.0V, total gate charge of 64.2nC at VGS=-10V, and an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards for automotive reliability
- Low on-state resistance minimizes power losses
- Thermally efficient small form factor package enables higher density designs
- 100% unclamped inductive switching tested for enhanced reliability
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS 3 compliance and is halogen-free. Ensure procurement channels are authorized to guarantee product authenticity and traceability for automotive-grade applications.
Selection Notes
Select this component when designing systems requiring high current handling capabilities within a compact footprint. The low thermal resistance and small board area occupation make it suitable for space-constrained layouts. Verify that the gate drive voltage aligns with the specified thresholds to ensure optimal on-resistance performance under expected load conditions.
Part Context
This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It is designed specifically to address the stringent requirements of automotive electronics. The device integrates robust protection features and is built using silicon technology housed in a lead-free molded plastic case with nickel-palladium-gold terminal finishes.
Replacement Considerations
Direct substitutes must match the -30V rating, V-DFN3333-8 package, and comparable RDS(ON) specifications. Verify pinout compatibility and thermal characteristics before integration.
