DMP3007SCGQ-7

$1.33

Description：MOSFET P-CH 30V 50A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:18aaf7f45494 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 50A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.8mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：64.2 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2826 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8 (Type B)
Package / Case：8-PowerVDFN

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DMP3007SCGQ-7

Overview

The DMP3007SCGQ-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications and qualified to AEC-Q101 standards. It features a V-DFN3333-8 (Type B) surface-mount package with a drain-source voltage of -30V. The device supports a continuous drain current of -50A at TC = +25°C and offers a maximum on-resistance of 6.8mΩ at VGS = -10V. Total gate charge is 64.2nC at VGS = -10V, with an operating temperature range of -55°C to +150°C.

Feature Summary

Low RDS(ON) minimizes on-state power losses
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 packages
100% unclamped inductive switching tested in production ensures reliability

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. The SCGQ variant corresponds to a tape and reel configuration. Confirm that the component meets the necessary automotive qualification requirements, specifically AEC-Q101 compliance and PPAP capability, before finalizing procurement specifications.

Selection Notes

Select this component when low conduction loss and high current handling are critical within a compact footprint. The V-DFN3333-8 package provides superior thermal efficiency compared to traditional SO-8 designs. Ensure the application environment aligns with the specified junction temperature limits and requires AEC-Q101 automotive grade reliability.

Part Context

This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic case classified as UL 94V-0. The device is lead-free, fully RoHS compliant, and halogen and antimony free, adhering to green device standards.