DMP3008SFG-7

$0.65

Description：MOSFET P-CH 30V 8.6A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c405c7ab94f4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 8.6A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2230 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP3008SFG-7

Overview

The DMP3008SFG-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (V_DSS) of -30 V and a gate-source voltage (V_GSS) rating of ±20 V. The device offers a maximum on-resistance (R_DS(ON)) of 17 mΩ at V_GS = -10 V and 25 mΩ at V_GS = -4.5 V. Continuous drain current (I_D) reaches -8.6 A at +25°C with a -10 V gate drive. Total gate charge (Q_g) is typically 47 nC at V_GS = -10 V. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Utilizes a small form factor thermally efficient package that occupies only 33% of the board area compared to SO-8 packages, enabling higher density end products.
Qualified to AEC-Q101 standards for high reliability.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision DS35598 Rev. 6 applies to the specific lot. Ensure compliance with RoHS and REACH directives as specified. Check for moisture sensitivity level 1 per J-STD-020 requirements during storage and handling. Validate solderability per MIL-STD-208 if required by assembly process.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with low R_DS(ON). Consider the -30 V rating for appropriate voltage headroom. Evaluate thermal dissipation capabilities based on the PowerDI3333-8 package constraints. Verify gate drive voltage compatibility with the specified R_DS(ON) thresholds at -10 V and -4.5 V.

Part Context

This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It is packaged in the PowerDI3333-8 footprint, which is designed for space-constrained PCB layouts. The product is marked as not recommended for new design, with the manufacturer suggesting the DMP3036SFV as an alternative.