DMP3008SFGQ-7

$1.23

Description：MOSFET P-CH 30V 8.6A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:93e920f3215f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 8.6A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2230 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP3008SFGQ-7

Overview

The DMP3008SFGQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -30V and utilizes the PowerDI3333-8 surface-mount package. The device offers a typical static drain-source on-resistance (RDS(ON)) of 17mΩ at VGS = -10V and 25mΩ at VGS = -4.5V. Continuous drain current ratings are -8.6A at TA = +25°C with VGS = -10V, and -7.1A at TA = +25°C with VGS = -4.5V. Total gate charge is typically 47nC at VGS = -10V.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Utilizes a small form factor thermally efficient package that occupies just 33% of the board area compared to SO-8 packages.
Qualified to AEC-Q101 standards for high reliability and is PPAP capable for automotive applications.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. The DMP3008SFGQ-7 designation indicates a tape and reel configuration with a standard factory pack size of 2,000 units. Confirm RoHS compliance and lead-free status requirements against project specifications before finalizing procurement orders.

Selection Notes

Select this component when low on-state resistance is critical for minimizing conduction losses in compact designs. The PowerDI3333-8 package provides significant board space savings compared to traditional SO-8 footprints. Ensure the application operates within the specified -30V drain-source voltage limit and thermal constraints defined in the datasheet.

Part Context

This part belongs to the DMP3008SFGQ series of P-channel MOSFETs from Diodes Incorporated. It is specifically engineered for applications requiring high density and thermal efficiency. The device is constructed using silicon technology and housed in a molded plastic case classified as UL Flammability Rating 94V-0.