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Product Detailed Parameters
- Description：MOSFET P-CH 30V 36A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：36A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：126.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6234 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.18W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMP3010LPSQ-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage of -30V and a continuous drain current of -36A at +25°C with VGS = -10V. The static drain-source on-resistance is typically 7.5mΩ at VGS = -10V and 10mΩ at VGS = -4.5V. The device operates within a temperature range of -55°C to +150°C and includes an internal body diode.
Feature Summary
- Thermally efficient PowerDI5060-8 package design for cooler running applications
- Low on-state resistance to minimize power losses during conduction
- Fast switching speed combined with low input capacitance for high conversion efficiency
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- Notebook battery power management
- DC-DC converters
- Load switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as specified by the manufacturer's green product definitions. Ensure the application environment remains within the stated thermal and electrical limits defined in the datasheet.
Selection Notes
Select this component for designs requiring a compact surface-mount solution with high current handling capabilities. The low profile and thermal performance make it suitable for space-constrained portable electronics. Verify gate drive voltage compatibility, as on-resistance varies significantly between -10V and -4.5V gate thresholds.
Part Context
This part belongs to the DMP3010 series of P-channel MOSFETs manufactured by Diodes Incorporated under the PowerDI brand. It utilizes silicon technology and is designed to balance low on-resistance with superior switching characteristics. The component is intended for general-purpose switching applications where size and thermal efficiency are critical constraints.
Replacement Considerations
Consult official substitution lists for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering similar packages.
