DMP3011SFVW-13

$0.84

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:31b70fcb41fb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：19.8A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2380 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：980mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP3011SFVW-13

Overview

The DMP3011SFVW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and a maximum continuous drain current of -50A at case temperature +25°C. The device offers a low on-state resistance of 10mΩ at VGS = -10V and 18mΩ at VGS = -4.5V. Packaged in the thermally efficient PowerDI3333-8 (SWP) form factor, it supports an operating junction temperature range from -55°C to +150°C.

Feature Summary

Low on-state resistance minimizes conduction losses for high-efficiency power management.
Small form factor package occupies significantly less board area than traditional SO-8 packages.
Integrated ESD protection safeguards the gate terminal against electrostatic discharge events.

Applications

General purpose interfacing switch
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen-free. Ensure the selected variant matches the required thermal performance characteristics for the intended application environment.

Selection Notes

Select this component when space constraints require a compact surface-mount solution with high current handling capabilities. Evaluate the thermal resistance parameters to ensure adequate heat dissipation within the system design. Consider the gate threshold voltage specifications to guarantee compatibility with the driving logic levels used in the circuit architecture.

Part Context

This part belongs to the DMP3011 series of P-channel MOSFETs designed for general-purpose switching applications. It utilizes the PowerDI3333-8 package, which provides superior thermal efficiency compared to standard plastic packages. The device is engineered to balance low on-resistance with robust switching performance.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings, pin configurations, and package dimensions to ensure functional equivalence without compromising system reliability or safety margins.