DMP3013SFV-13

$0.71

Description：MOSFET P-CH 30V 12A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:628c9bbfd2d4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 12A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.7 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1674 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：940mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMP3013SFV-13

Overview

The DMP3013SFV-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -30 V and a gate-source voltage (VGSS) rating of ±25 V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 9.5 mΩ at VGS = -10 V and 17 mΩ at VGS = -4.5 V. Continuous drain current (ID) reaches -35 A at TC = +25°C and -25 A at TC = +70°C. Total power dissipation is 31 W when mounted to the case. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

Low RDS(ON) design minimizes on-state losses for high-efficiency power management.
PowerDI3333-8 package occupies 33% less board area than SO-8, enabling higher density products.
ESD protected gate structure enhances reliability.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3000 units. Confirm that the PowerDI3333-8 (Type UX) package dimensions align with the target PCB footprint. Ensure the component meets RoHS and halogen-free requirements if mandated by the end-product specifications.

Selection Notes

Select this component for applications requiring low conduction loss in compact designs. Evaluate thermal resistance values based on the specific copper pad layout and substrate thickness used in the final assembly. Consider the gate threshold voltage characteristics to ensure compatibility with the intended logic-level drive signals.

Part Context

This part belongs to the DMP3013SFV series of P-channel MOSFETs. It utilizes the PowerDI3333-8 (Type UX) surface-mount package. The product line emphasizes minimizing on-state resistance while maintaining superior switching performance for efficient power management solutions.