DMP3013SFV-7

DMP3013SFV-7

$0.65
  • Description:MOSFET P-CH 30V 12A PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:b75b2b68dc09 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 30V 12A PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:9.5mOhm @ 11.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:33.7 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:1674 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):940mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerDI3333-8 (Type UX)
  • Package / Case:8-PowerVDFN

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DMP3013SFV-7

Overview

The DMP3013SFV-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) surface-mount package. It features a drain-source voltage of -30 V and a maximum continuous drain current of -35 A at case temperature +25°C. The device exhibits a low on-state resistance of 9.5 mΩ max at VGS = -10V and 17 mΩ max at VGS = -4.5V. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Minimizes on-state losses through low RDS(ON) while maintaining superior switching performance.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies significantly less board area compared to traditional SO-8 packages.
  • Features an ESD protected gate for enhanced reliability.

Applications

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen and antimony free as specified by the manufacturer's green product definitions. Ensure the application environment remains within the stated thermal and electrical limits.

Selection Notes

Select this component when high-efficiency power management requires minimizing conduction losses in compact designs. The low on-resistance supports high-current applications up to 35A under optimal thermal conditions. Consider the small footprint advantage for space-constrained PCB layouts where traditional larger packages are unsuitable.

Part Context

This part belongs to the DMP3013SFV series of P-channel MOSFETs designed for high-density power applications. Manufactured by Diodes Incorporated, it utilizes silicon technology in a lead-free PowerDI3333-8 case. The series is engineered to balance low static resistance with fast dynamic switching characteristics for modern electronic systems.

Replacement Considerations

DMP3013SFV-13 is a confirmed substitute offering identical electrical specifications but packaged in 3000-unit tape and reels instead of 2000 units.

DMP3013SFV-7DMP3013SFV-7
$0.65
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