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Product Detailed Parameters
- Description：MOSFET P-CH 30V 11.5A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2246 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：940mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMP3017SFG-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 surface-mount package and operates with a drain-source voltage of -30V. The device provides a maximum continuous drain current of -11.5A at +25°C, with a typical static drain-source on-resistance of 8.5mΩ at VGS = -10V. Total gate charge is specified as 41nC at VGS = -10V. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
- Features an ESD protected gate structure.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required packaging quantity. Ensure compliance with RoHS and halogen-free requirements if mandated by project specifications. Check for any automotive qualification needs, as separate datasheets exist for qualified variants.
Selection Notes
Select this component for designs requiring low on-resistance in a compact footprint. Evaluate thermal dissipation capabilities based on the specific PCB copper area and ambient temperature conditions. Consider the gate threshold voltage characteristics for compatibility with the driving logic levels used in the target circuit design.
Part Context
This part belongs to the DMP3017 series of P-channel MOSFETs. It utilizes the PowerDI3333-8 case style, which is a molded plastic package designed for improved thermal performance relative to its physical size. The product line focuses on balancing conduction losses with switching speed for portable and space-constrained electronics.
Replacement Considerations
The datasheet explicitly states 'NOT RECOMMENDED FOR NEW DESIGN' and directs users to use DMP3013SFV instead. Verify if the substitute meets all electrical and mechanical requirements before implementation.
