DMP3017SFGQ-13

Description：MOSFET P-CH 30V 11.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:09b396d6fab4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 11.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2246 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：940mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP3017SFGQ-13

Overview

The DMP3017SFGQ-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of -30V and a maximum continuous drain current (ID) of -11.5A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 10mΩ at VGS = -10V and 18mΩ at VGS = -4.5V. It operates within a temperature range of -55°C to +150°C and includes an ESD-protected gate.

Feature Summary

Designed for high-efficiency power management with minimized on-state losses
Small form factor thermally efficient package enabling higher density end products
Occupies just 33% of the board area occupied by SO-8 packages
Suitable for automotive applications requiring specific change control

Applications

Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the component matches the exact part number DMP3017SFGQ-13. Confirm that the datasheet revision aligns with your design requirements. Check for any specific automotive qualification notes if applicable. Ensure the ordering suffix corresponds to the correct tape and reel quantity. Validate compliance with RoHS and halogen-free standards as specified by the manufacturer.

Selection Notes

Select this component when a compact P-channel MOSFET with low RDS(ON) is required. Consider the PowerDI3333-8 package for space-constrained designs. Evaluate thermal performance based on the junction-to-ambient resistance values provided. Ensure the gate drive voltage meets the threshold requirements for optimal switching performance.

Part Context

This MOSFET belongs to the DMP series of P-channel enhancement mode devices. It is manufactured by Diodes Incorporated using silicon technology. The PowerDI3333-8 package provides a lead-free, fully RoHS-compliant solution suitable for surface mount applications.