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Product Detailed Parameters
- Description：MOSFET P-CH 30V 40A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2246 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：31W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMP3017SFV-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) surface-mount package. It features a drain-source voltage of -30V and a maximum continuous drain current of -40A at case temperature +25°C. The device offers a typical on-resistance of 8.5mΩ at VGS=-10V and 15mΩ at VGS=-4.5V. Total gate charge is 41nC at VGS=-10V. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
- Features an ESD protected gate structure.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision DS37534 Rev. 3 matches the delivered product. Ensure compliance with RoHS and lead-free requirements as specified by Diodes Incorporated. Validate packaging type corresponds to the ordered suffix.
Selection Notes
Select this component for compact designs requiring low on-resistance and high current handling in a small footprint. Consider thermal management strategies due to the exposed drain pad design. Evaluate gate drive requirements against the specified threshold and charge characteristics. Note that this part is not recommended for new designs.
Part Context
This component belongs to the DMP30xx series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UX) package, which provides a balance of electrical performance and physical size reduction compared to traditional transistor packages.
Replacement Considerations
The datasheet explicitly states: NOT RECOMMENDED FOR NEW DESIGN. USE DMP3013SFV. Designers should evaluate the DMP3013SFV as the primary replacement or alternative for new projects.
