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Product Detailed Parameters
- Description：MOSFET P-CH 30V 10.6A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：16.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：31.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1678 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.15W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMP3025LK3-13-01 is a discontinued P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252-3L (DPAK) surface-mount package with a drain-source voltage rating of -30V and a continuous drain current of -16.1A at 25°C. The device achieves a maximum on-resistance of 25mΩ at VGS=-10V and 41mΩ at VGS=-4.5V. Key electrical parameters include a gate threshold voltage range of -1.0V to -3.0V, total gate charge of 16.5nC at VGS=-4.5V, and a power dissipation capacity of 4.3W in still air.
Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed capabilities
- RoHS compliant construction without halogens or antimony
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
This component is officially marked as discontinued by the manufacturer. Verify availability through secondary market channels or authorized distributors holding remaining stock. Confirm that the specific ordering suffix matches the required reel size and tape width specifications before finalizing any acquisition plans.
Selection Notes
Select this part only if the application can accommodate a -30V rating and requires low RDS(on) performance in a TO-252-3L package. Evaluate thermal requirements against the specified junction-to-ambient resistance values. Ensure the driving circuit provides sufficient negative gate-source voltage to fully enhance the channel for optimal conduction characteristics.
Part Context
The DMP3025LK3 belongs to Diodes Incorporated's generation of P-channel MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. This specific model utilizes a molded plastic case with a matte tin finish over a copper leadframe, suitable for standard surface mount assembly processes on FR4 printed circuit boards.
Replacement Considerations
As the DMP3025LK3 is discontinued, verify functional equivalents from the same manufacturer family or other suppliers offering identical pinouts and electrical ratings. Cross-reference datasheets to ensure compatibility regarding thermal resistance, gate charge, and package dimensions.
