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The DMP3027LFDE-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -8.5A at +25°C. The device offers a low on-resistance of 25mΩ at VGS = -10V and 38mΩ at VGS = -4.5V. Packaged in a U-DFN2020-6 (Type E) surface-mount format, it supports an operating temperature range from -55°C to +150°C with a total power dissipation of 1.0W.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically the halogen and antimony-free 'Green' device definition. Ensure the selected package type matches the PCB footprint requirements for the U-DFN2020-6 (Type E) form factor before finalizing procurement.
Select this component when designing circuits requiring a compact P-channel MOSFET with low on-resistance and fast switching capabilities. The U-DFN2020-6 package is suitable for space-constrained applications. Evaluate thermal management needs based on the specified junction-to-ambient thermal resistance values under steady-state conditions to ensure reliable operation within the -55°C to +150°C temperature range.
This part belongs to the DMP3027LFDE series of P-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to balance low on-state resistance with superior switching performance. The product line targets high-efficiency power management applications, utilizing silicon technology to deliver robust electrical characteristics in a small surface-mount package.
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with voltage ratings, current handling, and package dimensions.