DMP3027LFDEQ-13

$0.09

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ff3df7a3bf30 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1142 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMP3027LFDEQ-13

Overview

The DMP3027LFDEQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package and operates with a drain-source voltage of -30V. The device supports a continuous drain current of -8.5A at +25°C, with a maximum on-resistance of 25mΩ at VGS = -10V. It includes an internal body diode with a forward voltage of -1.2V at -2.1A. The component is rated for junction temperatures between -55°C and +150°C.

Feature Summary

Low input capacitance and low on-resistance for high-efficiency power management
Fast switching speed suitable for DC-DC converters and load switches
Totally lead-free, fully RoHS compliant, and halogen/antimony free
AEC-Q101 qualified and PPAP capable for automotive applications

Applications

DC-DC converters
Power-management functions
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' to confirm the 10,000-unit tape and reel packing quantity. Ensure the application environment remains within the specified -55°C to +150°C operating temperature range. Confirm that the U-DFN2020-6 footprint matches the manufacturer's suggested pad layout to ensure proper thermal dissipation and solderability.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. The U-DFN2020-6 package provides a small form factor while maintaining adequate thermal performance. Consider the AEC-Q101 qualification if the design targets automotive systems requiring specific change control and manufacturing standards.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN2020-6 (Type E) package. The device is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for modern high-efficiency power management applications.