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The DMP3027LFDEQ-7 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package and operates with a drain-source voltage of -30V. The device supports a continuous drain current of -8.5A at +25°C, with a maximum on-resistance of 25mΩ at VGS = -10V. Key electrical parameters include a gate threshold voltage of -2.4V max, total gate charge of 21.8nC, and input capacitance of 1142pF. Thermal characteristics specify a junction-to-ambient resistance of 113.8°C/W and an operating temperature range from -55°C to +150°C.
Verify the exact ordering suffix when purchasing. The datasheet lists DMP3027LFDEQ-7 as a 3,000-unit tape and reel option. Confirm that the received component matches the specified marking code F7 and package type U-DFN2020-6 (Type E). Ensure compliance with AEC-Q101 qualification requirements if used in automotive contexts.
Select this component for designs requiring a compact P-channel MOSFET with low on-resistance in a small footprint. Consider the thermal resistance limits when determining heat dissipation needs. Verify that the required gate drive voltage aligns with the specified threshold and on-resistance test conditions for optimal performance.
This part belongs to the DMP3027LFDEQ series of 30V P-channel MOSFETs. It utilizes silicon technology and is housed in a U-DFN2020-6 package. The device is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for modern power management applications.
DMP3027LFDEQ-13 is a confirmed substitute offering identical electrical specifications but packaged in a 10,000-unit tape and reel carrier.