DMP3028LFDE-13

$0.54

Description：MOSFET P-CH 30V 6.8A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3f156c0d64e8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 6.8A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：32mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1241 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：660mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMP3028LFDE-13

Overview

The DMP3028LFDE-13 is a surface-mount P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type E) package with a drain-source voltage of -30V and a continuous drain current of -6.8A at +25°C. The device offers a maximum on-resistance of 25mΩ at VGS=-10V and 38mΩ at VGS=-4.5V. Total gate charge is 22nC at VGS=-10V, with an input capacitance of 1241pF. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed capabilities
Totally lead-free and fully RoHS compliant
Qualified to JEDEC standards for high reliability

Applications

DC-DC converters
Power-management functions
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental specifications, including being halogen and antimony free. Ensure the selected variant aligns with the intended thermal and electrical requirements for the target application design.

Selection Notes

Select this component for applications requiring low on-state resistance and superior switching performance in compact designs. Consider the U-DFN2020-6 package for space-constrained layouts. Evaluate thermal dissipation needs against the specified junction-to-ambient resistance values under steady-state and transient conditions.

Part Context

This part belongs to the DMP3028 series of P-channel MOSFETs designed to minimize on-state resistance while maintaining fast switching. It serves as a standard discrete semiconductor solution for general-purpose power switching tasks within consumer and industrial electronics.