DMP3035LSS-13

$0.19

Description：MOSFET P-CH 30V 11A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:da5f67ddac70 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 11A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 20V
Rds On (Max) @ Id, Vgs：16mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30.7 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1655 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP3035LSS-13

Overview

The DMP3035LSS is a single P-channel enhancement mode MOSFET in an SO-8 package. It features a drain-source voltage of -30V and low on-resistance values of 14mΩ at VGS=-20V, 18mΩ at VGS=-10V, and 36mΩ at VGS=-4.5V. Maximum continuous drain currents are -10A at +25°C and -8A at +70°C. The device includes internal diode characteristics with a forward voltage of -0.5V to -1.1V. Dynamic parameters include input capacitance of 1,655pF and total gate charge of 15.3nC to 30.7nC depending on drive conditions.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for high reliability automotive applications.
Totally lead-free and fully RoHS compliant with halogen and antimony free green device construction.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify component authenticity by checking the manufacturer's marking code P3035LS and date code YYWW against official Diodes Incorporated documentation. Confirm the part number suffix -13 corresponds to the specified tape and reel packaging quantity. Ensure compliance with current environmental directives as stated in the datasheet notes regarding lead-free and halogen-free definitions.

Selection Notes

Select this component for designs requiring a -30V P-channel MOSFET with low RDS(ON) in an SO-8 package. Note that the datasheet explicitly states this part is not recommended for new design and recommends using the DMP3036SSS instead. Evaluate thermal performance based on the provided junction-to-ambient thermal resistance and safe operation area curves for your specific duty cycle requirements.

Part Context

This component is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is housed in a standard SO-8 plastic case with matte tin annealed terminals over a copper leadframe. The device is designed to balance low static conduction losses with fast dynamic switching capabilities, targeting efficient power conversion topologies.