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Product Detailed Parameters
- Description：MOSFET P-CH 30V 30A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1931 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8 (Type UX)
- Package / Case：8-PowerVDFN
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Overview
The DMP3036SFV-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -30A at +25°C case temperature. The device exhibits a low on-state resistance of 20mΩ at VGS = -10V and 29mΩ at VGS = -5V. It utilizes the PowerDI3333-8 (Type UX) surface-mount package, which occupies approximately 33% of the board area compared to an SO-8 package. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low on-state resistance minimizes conduction losses for high efficiency
- Compact thermally efficient package enables higher density end products
- Totally lead-free and fully RoHS compliant construction
Applications
- Load Switch
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity. The -7 suffix indicates a 2000-unit tape and reel configuration. Confirm that the PowerDI3333-8 footprint aligns with the PCB layout guidelines provided in the datasheet. Ensure thermal management strategies account for the specified thermal resistance values under intended operating conditions.
Selection Notes
Select this component when space constraints are critical due to its small form factor relative to traditional packages. Evaluate the gate threshold voltage requirements against the control logic levels, as it requires negative gate drive voltages for turn-on. Consider the thermal performance characteristics if the application involves sustained high-current loads or elevated ambient temperatures.
Part Context
This part belongs to the DMP3036SFV series of P-channel MOSFETs from Diodes Incorporated. It is designed to balance low on-resistance with superior switching performance. The series targets applications requiring efficient power management in compact electronic devices where board real estate is limited.
Replacement Considerations
Direct substitutes include the DMP3036SFV-13, which shares identical electrical specifications but comes in a 3000-unit tape and reel packaging format.
