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Product Detailed Parameters
- Description：MOSFET P-CH 30V 19.5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：19.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1931 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP3036SSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SO-8 surface-mount package. It features a drain-source voltage rating of -30V and a continuous drain current of -19.5A at +25°C case temperature. The device exhibits a maximum on-resistance of 20mΩ at VGS = -10V and 29mΩ at VGS = -5V. Key electrical parameters include a gate threshold voltage ranging from -1.0V to -3.0V, total gate charge of 16.5nC at VGS = -10V, and input capacitance of 1931pF. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Low input/output leakage characteristics
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets the specified Halogen and Antimony-free 'Green' device requirements if environmental compliance is a project constraint. Ensure the SO-8 package dimensions align with the target PCB footprint layout.
Selection Notes
Select this component when a single P-channel MOSFET with a -30V breakdown voltage and up to -19.5A continuous current capability is required. The device is suitable for applications demanding low on-resistance at both -5V and -10V gate drive levels. Consider the thermal resistance values provided for both ambient and case-mounted conditions during heat dissipation planning.
Part Context
This part belongs to the DMP3036 series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The DMP3036SSS-13 variant specifically utilizes the standard SO-8 plastic molded case with UL flammability classification rating 94V-0.
Replacement Considerations
Cross-reference other DMP3036 series variants such as DMP3036SFV-13 or DMP3036SFG-13 for alternative package options like PowerDI3333-8. Verify pinout compatibility and thermal characteristics before substituting packages within the same electrical family.
