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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.7A (Ta), 19.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：42mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：782 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMP3045LFVWQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -30V drain-source voltage and a maximum continuous drain current of -19.9A at +25°C case temperature. The device offers a low on-resistance of 42mΩ at VGS = -10V and 65mΩ at VGS = -4.5V. Packaged in a thermally efficient PowerDI3333-8 (SWP) format, it supports an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- PowerDI3333-8 package occupies 33% less board area than SO-8 equivalents
- Integrated ESD protection diode on the gate terminal
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify that the specific ordering suffix matches the required tape and reel quantity. Confirm compliance with RoHS 3 and halogen-free requirements if mandated by project specifications. Ensure the component is sourced from authorized channels to guarantee IATF 16949 manufacturing certification and valid quality documentation.
Selection Notes
Select this component when space-constrained automotive designs require high-density packaging. Evaluate thermal resistance values against expected ambient temperatures to ensure safe operation within the specified junction limits. Consider the gate threshold voltage characteristics for compatibility with available logic drive levels.
Part Context
This part belongs to Diodes Incorporated's advanced automotive-grade MOSFET portfolio. It utilizes silicon technology housed in a molded plastic green compound package. The product line emphasizes lead-free construction and environmental compliance while maintaining robust electrical performance for demanding power switching environments.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional equivalence without redesigning the host circuit layout.
