DMP3045LVT-13

$0.09

Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f1f8725f1ef3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：42mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：749 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP3045LVT-13

Overview

The DMP3045LVT-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -5.4A at +25°C with VGS = -10V. The device exhibits a typical on-resistance of 28mΩ at VGS = -10V, rising to 65mΩ max at VGS = -4.5V. Packaged in a TSOT26 surface-mount format, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Low on-state resistance for high efficiency power management
Low input capacitance supporting fast switching speeds
ESD protected gate structure

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen-free. Ensure the design accommodates the specified thermal characteristics and package dimensions for the TSOT26 form factor.

Selection Notes

Select this component when low on-resistance and fast switching are required in a compact TSOT26 package. Evaluate the gate threshold voltage requirements against the available drive voltages, noting the distinct performance metrics at -10V versus -4.5V gate-source conditions. Consider the thermal dissipation limits for the intended application environment.

Part Context

This part belongs to the DMP3045LVT series of P-channel MOSFETs from Diodes Incorporated. It is designed specifically to minimize on-state resistance while maintaining superior switching performance. The product is intended for applications demanding high efficiency in power management systems.