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Product Detailed Parameters
- Description：MOSFET P-CH 30V 4.3A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.8 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：642 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.38W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3056L-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -4.3A at +25°C. The device exhibits a low on-resistance of 50mΩ at VGS=-10V and 70mΩ at VGS=-4.5V. Total gate charge is 11.8nC at VGS=-10V, with an input capacitance of 642pF. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 1.38W in a standard SOT23 package.
Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Low gate threshold voltage enabling easy drive compatibility
- Totally lead-free and fully RoHS compliant
Applications
- High-efficiency power management applications
- DC/DC converter circuits
- Load switch designs
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the official datasheet. Confirm that the component meets the required environmental standards, including RoHS compliance and halogen-free specifications, before finalizing procurement orders.
Selection Notes
Select this component when a compact SOT23 package is required for P-channel switching applications. Ensure the design accommodates the thermal characteristics, specifically the 91°C/W junction-to-ambient thermal resistance. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Part Context
This part belongs to the DMP3056 series of P-channel MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The DMP3056L-13 variant specifically utilizes the standard SOT23 case outline for surface-mount assembly.
Replacement Considerations
Consult the manufacturer's documentation for qualified automotive alternatives or cross-reference with other P-channel MOSFETs sharing identical pinouts and electrical ratings. Verify package dimensions and thermal properties match the existing board layout constraints.
