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Product Detailed Parameters
- Description：MOSFET P-CH 30V 7.1A 8SOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：45mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.8 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：722 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP3056LSS-13 is a single P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOP-8L surface mount package. The device features a drain-source voltage rating of -30 V and a steady-state drain current of -7.1 A at 25°C ambient temperature. Static drain-source on-resistance is specified as 45 mΩ at VGS = -10V and 65 mΩ at VGS = -4.5V. Total power dissipation reaches 2.5 W, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- High efficiency power management applications
- Automotive electronic systems requiring high reliability components
- General purpose power switching circuits
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets RoHS compliance and green device requirements if environmental regulations apply to the assembly process. Ensure the SOP-8L package dimensions align with the PCB footprint design specifications.
Selection Notes
Select this component when a P-channel MOSFET with low on-resistance and fast switching characteristics is required. Consider the thermal resistance and power dissipation limits relative to the expected load current and ambient temperature conditions. Verify gate threshold voltage compatibility with the driving logic levels.
Part Context
This part belongs to the DMP3056L series of single P-channel enhancement mode field effect transistors. The series is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets applications demanding high efficiency and reliability in compact surface mount packages.
Replacement Considerations
Check datasheets for alternative P-channel MOSFETs with similar voltage ratings and on-resistance values. Verify pinout compatibility and package dimensions to ensure direct replacement feasibility without PCB redesign.
