DMP3056LSSQ-13

$0.56

Description：MOSFET BVDSS: 25V~30V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:af5f4fee9413 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：45mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：969 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP3056LSSQ-13

Overview

The DMP3056LSSQ-13 is a single P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and operates within an ambient temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of -4.9A at +25°C, with a static drain-source on-resistance of 45mΩ at VGS = -10V. Packaged in an SO-8 case, it supports automotive-grade reliability standards.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications
Capable of supporting PPAP requirements
Manufactured in IATF 16949 certified facilities
Includes 100% unclamped inductive switching test in production

Applications

DC-DC Converters
Power Management Functions
Backlighting

Procurement Notes

Verify the specific suffix Q-13 matches the required automotive qualification level. Confirm that the SO-8 package dimensions align with the target PCB footprint. Ensure the design accounts for the thermal resistance values specified under different mounting conditions. Validate compliance with RoHS and halogen-free material definitions before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring AEC-Q101 qualified P-channel MOSFETs. Consider its low gate threshold voltage for efficient drive compatibility. Evaluate the thermal performance based on the intended power dissipation and board layout constraints. Verify that the -30V breakdown voltage meets the system's maximum operating voltage requirements.

Part Context

This part belongs to the DMP3056LSSQ series of single P-channel enhancement mode field effect transistors. It is designed specifically to meet stringent automotive industry requirements. The product line emphasizes robustness through comprehensive testing protocols and strict manufacturing controls.