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Product Detailed Parameters
- Description：MOSFET P-CH 30V 5.1A TSOT-26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：42mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：880 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP3065LVT-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum on-resistance of 42mΩ at VGS = -10V and 65mΩ at VGS = -4.5V, supporting continuous drain currents of -5.1A and -4.0A respectively. Packaged in a TSOT26 case, it includes an ESD protected gate and meets AEC-Q101 standards for high reliability.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features an ESD protected gate structure to enhance component robustness during handling and operation.
- Qualified to AEC-Q101 standards to ensure high reliability suitable for automotive and demanding environments.
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS compliance and halogen-free requirements if specified for your assembly process. Ensure the TSOT26 package dimensions align with your PCB footprint design guidelines before finalizing procurement orders.
Selection Notes
Select this component when a low on-resistance P-channel MOSFET is required for efficient power switching. The device supports both -10V and -4.5V gate drive levels, offering flexibility in logic interface compatibility. Consider the thermal characteristics and package size when designing for space-constrained or high-current applications requiring reliable heat dissipation.
Part Context
This part belongs to the DMP3065 series of P-channel MOSFETs from Diodes Incorporated. It utilizes a TSOT26 surface-mount package designed for automated assembly processes. The product line emphasizes low input capacitance and fast switching speeds to optimize overall system efficiency in portable and industrial electronic designs.
Replacement Considerations
Consult official substitution lists for verified alternatives. Cross-reference pinout configurations and electrical parameters such as RDS(ON) and breakdown voltage to ensure functional equivalence without modifying existing circuit board layouts or driver specifications.
