DMP3068L-13

$0.05

Description：MOSFET P-CH 30V 3.3A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:409b6f02686f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 3.3A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 10V
Rds On (Max) @ Id, Vgs：72mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.9 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：708 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP3068L-13

Overview

The DMP3068L-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a standard SOT-23 package. It features a drain-source breakdown voltage of -30V and a maximum continuous drain current of -3.9A at +25°C. The device exhibits a low on-state resistance of 72mΩ at VGS = -10V and 85mΩ at VGS = -4.5V. Key electrical parameters include a gate threshold voltage ranging from -0.5V to -1.3V, total gate charge of 15.9nC at VGS = -10V, and input capacitance of 708pF. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input/output leakage
Totally lead-free and fully RoHS compliant
Halogen and antimony free "Green" device

Applications

High-efficiency power management applications
General-purpose load switches
Power distribution circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental directives, including RoHS 2, RoHS 3, and halogen/antimony-free requirements, prior to final procurement authorization.

Selection Notes

Select this component when a compact SOT-23 footprint is required for P-channel switching applications operating within a 30V limit. Ensure the design accommodates the specified thermal resistance values and junction temperature limits. Verify that the gate drive voltage aligns with the optimal RDS(on) performance characteristics provided in the datasheet.

Part Context

This part belongs to the DMP3068L series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The product utilizes silicon technology and is designed for surface-mount assembly in standard electronic configurations.

Replacement Considerations

Consult the manufacturer's official documentation for qualified alternative part numbers or cross-reference options. Verify pinout compatibility, electrical ratings, and package dimensions before substituting any other components.