DMP3085LSS-13

$0.37

Description：MOSFET P-CH 30V 3.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:57701878fb21 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 3.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：70mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.2 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：563 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP3085LSS-13

Overview

The DMP3085LSS-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -30V and an SO-8 surface-mount package. The device exhibits a typical on-resistance of 70mΩ at VGS=-10V and 95mΩ at VGS=-4.5V. Continuous drain current ratings are -3.8A at +25°C and -3.2A at +25°C under specific thermal conditions. Total power dissipation reaches 1.3W at +25°C, with a junction-to-ambient thermal resistance of 96°C/W.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Qualified to AEC-Q101 standards for automotive-grade high reliability.
Totally lead-free and fully RoHS compliant, containing no purposely added lead.
Halogen and antimony free, classified as a 'Green' device.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the component against the official datasheet DS36165 Rev. 2-2 to confirm electrical parameters and physical dimensions. Ensure the SO-8 package matches the required PCB footprint. Confirm compliance requirements such as RoHS and AEC-Q101 qualification align with project specifications before finalizing procurement.

Selection Notes

Select this component for circuits requiring a single P-channel switch with low on-resistance in an SO-8 package. Evaluate thermal management needs based on the 96°C/W junction-to-ambient resistance rating. Consider the -30V breakdown voltage and continuous current limits relative to the specific load requirements and operating temperature range.

Part Context

This part belongs to the DMP3085 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SO-8 case constructed from molded plastic with a 94V-0 flammability rating. The device is designed for general-purpose power management tasks within consumer and industrial electronics.

Replacement Considerations

Consult the manufacturer's documentation for verified substitute part numbers. Cross-referencing requires matching critical electrical characteristics including voltage ratings, on-resistance, and package type to ensure functional compatibility.

FAQ

What is the gate threshold voltage range?

The gate threshold voltage ranges from -1V to -3V when tested with a drain-source voltage equal to the gate-source voltage and a drain current of -250µA.