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The DMP3096LQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -3.4A at +25°C. The maximum on-resistance (RDS(ON)) is 70mΩ at VGS = -10V and 130mΩ at VGS = -4.5V. The device operates within a temperature range of -55°C to +150°C and utilizes an SOT-23 package.
Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 10,000 units. Confirm that the component meets the necessary IATF 16949 manufacturing facility requirements for your specific automotive change control protocols before finalizing procurement.
Select this component when designing circuits requiring automotive-grade reliability and AEC-Q101 qualification. Ensure the gate drive voltage aligns with the specified RDS(ON) thresholds at -10V or -4.5V. Verify thermal management capabilities against the junction-to-ambient resistance values provided in the datasheet for your specific PCB layout.
This part belongs to the DMP3096L series of P-channel MOSFETs manufactured by Diodes Incorporated. The 'Q' suffix indicates automotive qualification, while the '-13' suffix denotes the standard 10,000-unit tape and reel packaging format used for high-volume surface mount assembly processes.
Consult official manufacturer substitution lists for verified equivalents. Do not assume generic replacements meet AEC-Q101 or PPAP requirements without explicit confirmation from Diodes Incorporated documentation.