DMP3096LQ-7

$0.37

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:43e781dd7465 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：70mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：366 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP3096LQ-7

Overview

The DMP3096LQ is a P-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of -30V and a continuous drain current of -3.4A at +25°C. The device offers a maximum on-resistance of 70mΩ at VGS = -10V and 130mΩ at VGS = -4.5V. It is qualified to AEC-Q101 standards, supports PPAP requirements, and operates within a temperature range of -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP support for automotive use
Low gate threshold voltage enabling efficient switching control
Fast switching speed supported by low input capacitance
Totally lead-free and fully RoHS compliant

Applications

General purpose interfacing switches
Power management functions

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) to confirm the required tape and reel quantity. Confirm that the SOT23 package aligns with your PCB footprint requirements. Ensure the design accounts for the thermal resistance values provided in the datasheet under your specific mounting conditions.

Selection Notes

Select this component when an automotive-grade P-channel MOSFET is required. The -30V rating suits standard 12V automotive systems. Verify that the gate drive voltage meets the threshold requirements for the desired on-resistance level. Consider the SOT23 package size constraints during layout planning.

Part Context

This part belongs to the Diodes Incorporated DMP series of P-channel MOSFETs. It is specifically engineered to meet the stringent reliability and quality standards of the automotive industry. The device utilizes silicon technology and is manufactured in IATF 16949 certified facilities.