DMP3097L-13

Overview

The DMP3097L-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 surface-mount package. It features a drain-source voltage (V_DSS) of -30 V and a maximum continuous drain current (I_D) of -3.9 A at +25°C. The device exhibits a low on-state resistance (R_DS(ON)) of 65 mΩ at V_GS = -10 V and 99 mΩ at V_GS = -4.5 V. Key electrical parameters include a gate threshold voltage (V_GS(TH)) ranging from -1.0 V to -2.1 V, total gate charge (Q_g) of 6.6 nC at V_GS = -4.5 V, and input capacitance (C_iss) of 563 pF. The component supports a junction temperature range of -55°C to +150°C.

Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
• Features low gate threshold voltage and low input capacitance to facilitate efficient drive requirements.
• Provides fast switching speed and low input/output leakage characteristics.

Applications

• Backlighting
• Power Management Functions
• DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS 2 and RoHS 3 compliance standards, including halogen-free and antimony-free specifications if required by the project constraints. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when a compact SOT-23 footprint is required for P-channel switching with a -30 V rating. The low R_DS(ON) values at both -10 V and -4.5 V gate drives make it suitable for logic-level control interfaces. Evaluate the thermal resistance and power dissipation limits against the expected load current and ambient operating conditions to ensure reliable operation within the specified temperature range.

Part Context

This part belongs to the DMP3097L series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The family focuses on optimizing the balance between conduction losses and switching dynamics. The standard SOT-23 case provides a cost-effective and space-efficient solution for general-purpose discrete semiconductor applications requiring moderate current handling capabilities.

Replacement Considerations

Direct substitutes must match the -30 V drain-source voltage, P-channel topology, and SOT-23-3 package outline. Verify that alternative components offer comparable R_DS(ON) values at -10 V and -4.5 V gate voltages to maintain circuit efficiency. Ensure pinout compatibility (Drain, Gate, Source) to prevent board redesign during replacement.

FAQ

What is the maximum pulsed drain current for the DMP3097L?

The maximum pulsed drain current (I_DM) is rated at -20 A, based on a 10 µs pulse duration with a 1% duty cycle.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage (V_GS(TH)) typically shifts negatively as the junction temperature increases, as illustrated in the typical transfer characteristic graphs provided in the datasheet.

Is the DMP3097L qualified for automotive applications?

Standard production units are not explicitly qualified for automotive use. For applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.