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Product Detailed Parameters
- Description：MOSFET P-CH 30V 3.8A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：65mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.2 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：563 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.08W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3099L-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -30 V and a continuous drain current (I_D) of -3.8 A at +25°C ambient temperature. The device offers a maximum on-resistance (R_DS(ON)) of 65 mΩ at V_GS = -10 V and -3.8 A, or 99 mΩ at V_GS = -4.5 V and -3.0 A. Total power dissipation is rated at 1.08 W with a thermal resistance (R_θJA) of 115 °C/W. Operating junction temperature ranges from -55°C to +150°C. The component is housed in a standard SOT-23 package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Features low gate threshold voltage and low input capacitance to support fast switching speeds.
- Compliant with RoHS directives and halogen/antimony-free standards.
Applications
- Backlighting
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the required automotive compliance is not needed; if automotive qualification is necessary, the separate datasheet for part number DMP3099LQ must be referenced instead of this standard commercial grade variant.
Selection Notes
Select this component when a compact SOT-23 footprint is required for P-channel switching applications operating within a 30 V limit. Ensure the driving circuit can provide sufficient gate-source voltage to achieve the desired R_DS(ON), noting the higher resistance at lower drive voltages. Evaluate thermal management requirements against the 115 °C/W junction-to-ambient rating for the intended PCB copper pad area.
Part Context
This device belongs to the DMP3099 series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered for power management efficiency. The DMP3099L-13 specifically denotes the standard commercial version packaged in a tape and reel format, distinct from the automotive-compliant DMP3099LQ variant which follows a separate datasheet specification.
Replacement Considerations
For automotive-grade requirements, consider the DMP3099LQ. Other series members like DMP3098LSS-13 offer different packages and current ratings but share similar voltage specifications.
FAQ
What is the maximum pulsed drain current for the DMP3099L?
The maximum pulsed drain current (I_DM) is rated at -11 A, provided the pulse width is less than or equal to 10 µs and the duty cycle does not exceed 1%.
How does the on-resistance vary with gate voltage?
The static drain-source on-resistance (R_DS(ON)) is specified as a maximum of 65 mΩ at V_GS = -10 V and I_D = -3.8 A. At a lower drive voltage of V_GS = -4.5 V and I_D = -3.0 A, the maximum R_DS(ON) increases to 99 mΩ.
