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Product Detailed Parameters
- Description：MOSFET P-CH 30V 3.8A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：65mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.2 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：563 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.08W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3099L-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and a maximum continuous drain current of -3.8A at +25°C ambient temperature. The device offers a low on-state resistance of 65mΩ at VGS = -10V and 99mΩ at VGS = -4.5V. It operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 1.08W. Packaged in an SOT-23 (TO-236AB) housing, it utilizes a standard tape and reel carrier for surface-mount assembly.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Features low gate threshold voltage and low input capacitance to support fast switching speeds.
- Constructed with totally lead-free materials that are fully RoHS compliant and halogen/antimony free.
Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity, as the -7 suffix indicates a 3000-unit tape and reel configuration. Confirm compliance requirements against the manufacturer's quality definitions for lead-free and green material standards. Ensure the design accommodates the specified thermal resistance and power dissipation limits under actual operating conditions.
Selection Notes
Select this component when a compact P-channel solution is required for low-voltage power management. The low gate charge supports efficient drive requirements in space-constrained designs. Evaluate the on-resistance specifications against the intended load current and gate drive voltage levels to ensure adequate thermal performance and efficiency targets are met.
Part Context
This part belongs to the DMP3099 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the same electrical characteristics as the automotive-compliant DMP3099LQ variant but is designated for general commercial use. The device is housed in a standard SOT-23 package suitable for automated surface-mount manufacturing processes.
Replacement Considerations
The DMP3099LQ is the automotive-compliant equivalent offering identical electrical specifications. Verify pinout compatibility and package dimensions when substituting with other generic P-channel MOSFETs to ensure proper circuit integration.
