ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 30V 2.5A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：95mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.1 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：254 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：650mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The DMP3125L-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and a maximum continuous drain current of -2.5A at +25°C. The device offers low on-resistance, specified as 95mΩ max at VGS = -10V and 145mΩ max at VGS = -4.5V. It utilizes an SOT-23 surface-mount package with a total power dissipation capability of 0.65W. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Low input and output leakage currents
- Totally lead-free and fully RoHS compliant
Applications
- Boost Switch
- Power Management Functions
- Analog Switch
- Load Switch
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format when sourcing this component. Confirm that the part number matches the manufacturer's official documentation to ensure correct electrical characteristics and mechanical dimensions are obtained for integration into the design.
Selection Notes
Select this component for applications requiring a compact P-channel MOSFET with low on-resistance in an SOT-23 package. Ensure the gate drive voltage meets the requirements for the desired on-resistance level, as performance varies between -4.5V and -10V gate-source voltages. Consider thermal constraints given the 0.65W power dissipation limit in standard FR-4 substrate conditions.
Part Context
This component belongs to the DMP3125L series from Diodes Incorporated, designed as a next-generation MOSFET to minimize on-state resistance while maintaining superior switching performance. The series includes variants such as the DMP3125L-13, which differs primarily in packaging quantity. The device is intended for use in high-efficiency power management circuits where small form factor and low loss are critical.
Replacement Considerations
The DMP3125L-13 is a confirmed substitute part number within the same product family, offering identical electrical specifications but packaged in 10,000-unit tape and reels instead of 3,000-unit reels.
