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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V-30V TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3.3V, 10V
- Rds On (Max) @ Id, Vgs：95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：287 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP3165SVT-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source breakdown voltage and supports a continuous drain current of 2.7A. The device exhibits a low on-resistance of 95 milliohms, with a gate-source threshold voltage of 2.2V and total gate charge of 6.8nC. It operates within a temperature range of -55°C to +150°C and dissipates up to 880mW of power. The component is housed in a compact TSOT-26-6 surface-mount package.
Feature Summary
- Dual independent P-channel configuration for efficient space-constrained designs
- Low on-resistance minimizes conduction losses in power paths
- Enhancement mode operation ensures reliable switching control
- TSOT-26-6 package provides high-density mounting capability
Applications
- DC-DC converter load switches
- Battery protection circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation, as variations such as SVT-13 may exist. Confirm availability status directly with authorized distributors, as supply constraints or end-of-life notices may affect procurement. Ensure the requested quantity matches the standard tape-and-reel packaging specifications provided in the official datasheet.
Selection Notes
Select this component when a dual P-channel solution is required in a small footprint. The 30V rating suits low-voltage systems, while the 2.7A current capacity handles moderate loads. Evaluate thermal performance based on the 880mW dissipation limit and ensure the TSOT-26-6 package fits the PCB layout constraints.
Part Context
This part belongs to the DMP series of dual P-channel MOSFETs from Diodes Incorporated. These devices are designed for general-purpose switching applications where board space is limited. The series offers various voltage and current ratings to accommodate different system requirements while maintaining consistent package dimensions for design flexibility.
Replacement Considerations
Check for compatible dual P-channel MOSFETs with similar 30V ratings and TSOT-26-6 packages. Verify that substitute parts meet the 2.7A current and 95 milliohm resistance specifications. Ensure pinout compatibility and thermal characteristics align with the original design.
