DMP31D1UWQ-7

$0.05

Description：MOSFET BVDSS: 8V~24V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:08882acb9e41 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：54 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：440mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMP31D1UWQ-7

Overview

The DMP31D1UWQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT323 package. It features a drain-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -0.6A at +25°C. The device exhibits a maximum on-resistance (RDS(ON)) of 1Ω at VGS = -4.5V and 1.5Ω at VGS = -2.5V. Total gate charge (Qg) is 1.0nC at VGS = -4.5V. Thermal resistance (RθJA) is 287°C/W, with power dissipation rated at 0.44W. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Low gate threshold voltage enabling easy drive compatibility
Fast switching speed with low input capacitance
ESD protected gate structure

Applications

DC-DC converters
Load switches
Power-management functions

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity, as the -7 suffix indicates a 3,000-unit tape and reel carrier. Confirm that the component meets AEC-Q101 qualification standards if automotive application compliance is required. Ensure the design accommodates the specified thermal resistance values under steady-state conditions.

Selection Notes

Select this component for applications requiring a compact SOT323 footprint with a -30V rating. Evaluate the RDS(ON) performance against the specific gate drive voltage available in the system, as resistance increases significantly below -4.5V. Consider the low gate charge for high-frequency switching requirements where minimizing driver loss is critical.

Part Context

This part belongs to the DMP31 series of P-channel MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. These devices are designed for high-efficiency power-management applications and are suitable for automotive environments requiring specific change control protocols.

Replacement Considerations

Check datasheets for alternative P-channel MOSFETs in the SOT323 package with compatible -30V ratings. Verify that substitute parts meet or exceed the -0.6A continuous drain current requirement and match the thermal characteristics for direct board replacement.