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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：580mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.36 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：430mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP31D7LQ is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a -30V drain-source voltage (BVDSS) and a maximum continuous drain current of -0.58A at +25°C. The device exhibits low on-state resistance, specified as 0.9Ω max at VGS = -10V and 1.7Ω max at VGS = -4.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-23 package.
Feature Summary
- Low on-resistance design minimizes conduction losses while maintaining superior switching performance.
- Low input capacitance and fast switching speed optimize dynamic efficiency.
- Gate is protected against electrostatic discharge (ESD).
- Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Applications
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix (-7 or -13) to confirm the required packing quantity and carrier type. Ensure the component meets RoHS 3 and halogen-free requirements if mandated by the project specifications. Confirm that the SOT-23 package dimensions align with the PCB footprint layout before finalizing procurement.
Selection Notes
Select this component when a compact P-channel MOSFET with low RDS(ON) is required for space-constrained designs. The -30V rating suits low-voltage systems. Verify that the gate drive voltage supports the desired RDS(ON) level, as resistance increases significantly below -10V. Consider the thermal resistance limits for steady-state operation in enclosed environments.
Part Context
This part belongs to Diodes Incorporated's generation of P-channel MOSFETs optimized for minimizing on-state resistance without compromising switching characteristics. It is manufactured in IATF 16949 certified facilities, ensuring consistent quality standards suitable for rigorous industrial and automotive deployment scenarios.
Replacement Considerations
Check pinout compatibility and package dimensions (SOT-23) when substituting. Verify that alternative parts meet the -30V BVDSS requirement and provide comparable RDS(ON) values at the intended gate drive voltages (-10V and -4.5V).
