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The DMP31D7LT-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -30 V and a gate-source voltage (V_GSS) of ±20 V. The device provides a maximum static drain-source on-resistance (R_DS(ON)) of 0.9 Ω at V_GS = -10 V and I_D = -0.42 A, or 1.7 Ω at V_GS = -4.5 V and I_D = -0.2 A. Continuous drain current is rated at -0.36 A at +25°C. Total power dissipation is 0.26 W with a thermal resistance (R_θJA) of 488 °C/W. Operating temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the SOT523 package dimensions and marking codes align with your assembly requirements. Ensure compliance with J-STD-020 moisture sensitivity level 1 standards during storage and handling processes.
Select this component for applications requiring low on-state resistance in a compact SOT523 footprint. Consider the -30 V rating and limited continuous current capability when designing power stages. Evaluate thermal performance based on the specified junction-to-ambient resistance values under steady-state conditions.
This part belongs to the DMP31 series of P-channel MOSFETs from Diodes Incorporated. It utilizes a surface-mount SOT523 package designed for space-constrained PCB layouts. The device is engineered to minimize on-state resistance while maintaining superior switching performance for modern electronic systems.
Consult official Diodes documentation for verified substitutes within the DMP31 family. Cross-reference electrical parameters such as V_DSS, R_DS(ON), and package type before implementation.
The maximum continuous drain current is -0.36 A at an ambient temperature of +25°C.
For automotive applications requiring specific change control, contact Diodes Incorporated directly as standard parts may not meet AEC-Q100/101/104/200 qualifications.