ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.36 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：260mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
Download product information
Overview
The DMP31D7LT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and an on-resistance of 0.9Ω at VGS = -10V with ID = -0.42A, or 1.7Ω at VGS = -4.5V with ID = -0.2A. The device operates within a junction temperature range of -55°C to +150°C and is housed in an SOT523 package.
Feature Summary
- Low on-resistance for high-efficiency power management
- Low gate threshold voltage enabling easy drive compatibility
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- DC-DC converters
- Load switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix (e.g., -7 for 3,000 units per tape and reel) against the manufacturer's official documentation to ensure correct packaging quantity and carrier type. Confirm RoHS compliance status and lead-free specifications directly from the datasheet before finalizing procurement orders.
Selection Notes
Select this component for applications requiring compact SOT523 packaging and efficient switching performance. Ensure the gate drive voltage meets the minimum requirements for the desired on-resistance level. Evaluate thermal dissipation capabilities based on the specified thermal resistance values under expected operating conditions.
Part Context
This part belongs to the DMP31 series of P-channel MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. These devices are intended for general-purpose power management tasks where space efficiency and energy conservation are priorities.
Replacement Considerations
Consult the manufacturer's official documentation for verified substitute part numbers. Cross-reference electrical parameters such as voltage ratings, current limits, and package dimensions when evaluating alternative components.
