DMP31D7LV-7

Overview

The DMP31D7LV-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum on-resistance of 0.9Ω at VGS = -10V and 1.7Ω at VGS = -4.5V. Continuous drain current reaches -0.62A at +25°C, with a total power dissipation of 0.5W. Packaged in an SOT563 surface-mount format, it includes gate protection diodes.

Feature Summary

• Dual configuration integrating two independent P-channel enhancement mode MOSFETs into a single compact package for space-constrained designs.
• Integrated ESD protected gate structure designed to safeguard the input terminals against electrostatic discharge events during handling and operation.
• Optimized switching performance combined with low on-state resistance to support high-efficiency power management applications.

Applications

• Motor controls
• Power management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix indicates the reel quantity: '-7' denotes a 3000-unit tape and reel, while '-13' indicates a 10,000-unit tape and reel. Confirm that the required packaging quantity aligns with your production needs before placing orders. Ensure compliance with RoHS directives as the device is lead-free and halogen-free.

Selection Notes

Select this component for applications requiring dual isolated P-channel switching in a minimal footprint. The SOT563 package supports efficient thermal dissipation relative to its size. Consider the gate threshold voltage characteristics when designing drive circuits, ensuring sufficient voltage levels are applied to achieve the desired on-resistance values for optimal efficiency.

Part Context

This part belongs to Diodes Incorporated's DMP series of dual P-channel MOSFETs. It serves as a compact alternative to discrete single-transistor solutions, reducing board space and assembly complexity. The device is engineered to minimize on-resistance while maintaining fast switching speeds, making it suitable for modern portable electronics and battery-powered systems.

Replacement Considerations

An automotive-compliant version of this component is available under the separate datasheet designation DMP31D7LVQ. Verify if automotive qualification standards are required for your specific application environment before selecting the standard or Q-mark variant.

FAQ

What is the internal schematic configuration of the DMP31D7LV?

The device contains two independent P-channel MOSFETs (S1/D1/G1 and S2/D2/G2) within a single SOT563 package. Each gate terminal includes an integrated protection diode.

How does the gate-source voltage affect the on-resistance?

The on-resistance decreases as the magnitude of the negative gate-source voltage increases. At VGS = -10V, RDS(ON) is typically 0.4Ω, whereas at VGS = -4.5V, it rises to approximately 0.7Ω.

Is the DMP31D7LV suitable for high-temperature environments?

Yes, the device is rated for an operating and storage temperature range from -55°C to +150°C, allowing for reliable operation in demanding thermal conditions.