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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：290mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMP31D7LWQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -0.52A at +25°C. The device offers a low on-resistance of 0.9Ω at VGS = -10V and 1.7Ω at VGS = -4.5V. It operates within a temperature range of -55°C to +150°C, dissipates up to 0.29W, and utilizes an SOT323 package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low on-resistance and low gate threshold voltage for efficient switching
- ESD protected gate structure with low input/output leakage currents
- Totally lead-free and fully RoHS compliant construction
Applications
- DC-DC converters
- Load switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required IATF16949 manufacturing facility standards and PPAP documentation requirements for your specific automotive supply chain protocols before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring a compact P-channel switch with automotive reliability qualifications. Ensure the application logic provides sufficient negative gate-source voltage to achieve the desired low on-resistance levels. Verify that the thermal design accommodates the specified junction-to-ambient resistance under steady-state operating conditions.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, specifically engineered to meet stringent industry quality standards. It is manufactured in IATF16949 certified facilities and supports change control requirements typical of automotive electronics supply chains.
Replacement Considerations
Consult official Diodes Incorporated cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar electrical ratings or package types without verifying pinout compatibility and qualification status.
