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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：290mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMP31D7LWQ-7 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (BVDSS) of -30V and a maximum continuous drain current (ID) of -0.52A at +25°C with VGS = -10V, or -0.38A at VGS = -4.5V. The device offers a typical static on-resistance (RDS(ON)) of 0.45Ω at VGS = -10V and 0.74Ω at VGS = -4.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT323 package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low on-resistance and low gate threshold voltage for efficient switching
- ESD protected gate structure with low input/output leakage currents
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- DC-DC converters
- Load switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity, as the datasheet lists both 3000-unit tape & reel (-7) and 10,000-unit tape & reel (-13) options. Confirm that the component meets the necessary IATF16949 manufacturing facility requirements if strict automotive change control protocols are mandated by the design specification.
Selection Notes
Select this component when designing circuits requiring a compact P-channel switch suitable for -30V systems. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Consider the thermal resistance characteristics and power dissipation limits relative to the expected load current and ambient operating conditions.
Part Context
This part belongs to the DMP31D7LWQ series of P-channel MOSFETs manufactured by Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability standards, distinguishing it from general-purpose industrial transistors through its qualification processes and material specifications.
Replacement Considerations
Direct substitutes include the DMP31D7LW-7 variant, which shares identical electrical characteristics but may differ in packaging quantities. Verify pinout compatibility and thermal performance before substitution.
