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The DMP32D4S-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, packaged in SOT23. It features a drain-source voltage (BVDSS) of -30V and a maximum continuous drain current (ID) of -300mA at +25°C. The device exhibits a low on-state resistance (RDS(ON)) of 2.4Ω at VGS = -10V and 4Ω at VGS = -4.5V. Total gate charge (Qg) is 0.6nC at VGS = -4.5V and 1.2nC at VGS = -10V. Operating temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable JEDEC standards for high reliability as documented by the manufacturer. Ensure compatibility with the required SOT23 footprint and pad layout specifications during PCB design integration.
Select this component for circuits requiring a compact P-channel switch with low on-resistance. Evaluate thermal performance against the junction-to-ambient resistance values provided in the datasheet. Consider the gate threshold voltage characteristics when designing drive circuits for varying load conditions.
This part belongs to the DMP32D4S series of P-channel MOSFETs manufactured by Diodes Incorporated. The series is engineered to balance low conduction losses with superior switching performance. The standard product line includes variants with different packaging quantities, such as the -7 suffix for 3,000 units per reel.
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix available from Diodes Incorporated.
The maximum continuous drain current is -300mA at an ambient temperature of +25°C.
This specific part is not qualified for automotive use; customers requiring AEC-Q qualification should consult the automotive grade versions with the Q-suffix.