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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V X2-DFN0606
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：17 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：290mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN0606-3
- Package / Case：3-XFDFN
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Overview
The DMP32D8UFZ-7B is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -200mA at +25°C. The device offers a low on-resistance, specified as 5Ω at VGS = -4.5V and ID = -100mA. It operates within a junction temperature range of -55°C to +150°C and utilizes an X2-DFN0606-3 package.
Feature Summary
- Low package profile with a maximum height of 0.42mm
- Very low gate threshold voltage for efficient switching
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- General purpose interfacing switches
- Power management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-7B' against official manufacturer documentation to confirm packaging details and availability status. Confirm that the component meets all required environmental compliance standards for your specific application before procurement.
Selection Notes
Select this component for applications requiring a compact footprint and low on-resistance in power management circuits. Ensure the design accommodates the thermal characteristics and maximum ratings defined in the datasheet for reliable operation.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. These devices are designed to minimize on-state resistance while maintaining superior switching performance, making them suitable for high-efficiency power management applications.
Replacement Considerations
Consult official Diodes Incorporated documentation or authorized distributors for confirmed substitute part numbers. Do not assume cross-compatibility without verifying electrical parameters and pin configurations.
