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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V X2-DFN0806
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：17 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN0806-3
- Package / Case：3-XFDFN
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Overview
The DMP32D9UFA-7B is a single-channel P-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage (BVDSS) and operates within a junction temperature range of -55°C to +150°C. The device utilizes an X2-DFN0806-3 surface-mount package with a maximum height of 0.4mm. Key electrical parameters include a maximum gate-source voltage (VGSS) of ±12V, a continuous drain current (ID) of -0.21A at +25°C, and a static drain-source on-resistance (RDS(ON)) of 5Ω at VGS = -4.5V. Total power dissipation is rated at 350mW.
Feature Summary
- Low package profile with a 0.4mm maximum height and 0.48mm² footprint
- Very low gate threshold voltage for efficient drive requirements
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- General-purpose interfacing switches
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-7B' against official Diodes documentation to confirm tape and reel packaging quantities. Ensure the component meets environmental compliance standards such as RoHS 3 and halogen-free requirements before integration into final assemblies. Confirm availability status directly with authorized distributors or the manufacturer.
Selection Notes
Select this component for applications requiring small form factor solutions where space constraints are critical. The low gate threshold voltage makes it suitable for logic-level control interfaces. Evaluate thermal management needs based on the specified 350mW power dissipation limit and ensure operating conditions remain within the defined safe operation area.
Part Context
This part belongs to the DMP32 series of P-Channel MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining switching performance for high-efficiency power management. The X2-DFN0806-3 package provides a compact alternative to traditional SOT-23 packages.
Replacement Considerations
Consult official Diodes documentation for verified substitute part numbers. Cross-referencing requires matching electrical characteristics, package dimensions, and pin configurations to ensure functional compatibility in existing designs.
