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Product Detailed Parameters
- Description：MOSFET P-CH 30V 100A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：158 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8594 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type K)
- Package / Case：8-PowerTDFN
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Overview
The DMP32M6SPS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of -30 V and a gate-source voltage (V_GSS) of ±20 V. The device supports a continuous drain current (I_D) of -100 A at V_GS = -10 V and +25 °C case temperature. Static drain-source on-resistance (R_DS(ON)) is specified as 2.6 mΩ at V_GS = -10 V and 3.75 mΩ at V_GS = -4.5 V, both measured at I_D = -20 A. Total gate charge (Q_g) is 158 nC at V_GS = -10 V. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Designed to minimize on-state losses while maintaining superior switching performance
- Features a thermally efficient package profile under 1.1 mm for thin applications
- Includes 100% Unclamped Inductive Switching (UIS) testing during production
Applications
- Notebook battery power management
- Load switch circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and is halogen and antimony free. Ensure the application environment remains within the specified thermal resistance limits and operating temperature range of -55 °C to +150 °C.
Selection Notes
Select this component when low on-resistance and high current handling are required in a compact form factor. The device is suitable for applications demanding high conversion efficiency and minimal heat generation due to its advanced silicon technology and optimized package design.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 (Type K) surface-mount package, which provides a low-profile solution ideal for space-constrained electronic designs requiring robust power management capabilities.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers or different series without validating pin configurations, electrical ratings, and thermal characteristics against the original datasheet specifications.
